发明名称 METHOD FOR USING A DUMMY SUBSTRATE
摘要 PURPOSE: A method for using a dummy substrate is provided to suppress the bending of the dummy substrate by making a transfer schedule of the corresponding dummy substrate with regard to a process chamber based on a process schedule. CONSTITUTION: A film formation history about a plurality of dummy substrates is made by a computer(6) based on a process recipe which is executed on a process chamber. The film formation history includes a kind of films and a film thickness. The curvature of the dummy substrate is obtained by the computer based on curvature data(66) and the film formation history of the dummy substrate. A transfer schedule about a process chamber is made based on the process schedule, the curvature data, and the curvature of the dummy substrate.
申请公布号 KR20110023792(A) 申请公布日期 2011.03.08
申请号 KR20100083122 申请日期 2010.08.26
申请人 TOKYO ELECTRON LIMITED 发明人 MIYASHITA TETSUYA;SHIRASAKA KENJI
分类号 H01L21/205;H01L21/203 主分类号 H01L21/205
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