发明名称 FUSE IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device fuse and manufacturing method thereof are provided to prevent a repair fuse defect due to migration by comprising a blowing part which has smaller diffusion coefficient than the pad of the fuse. CONSTITUTION: A wiring layer(102) is formed on a substrate(101). An insulating layer(103) is formed to cover the front of the structure including the wiring layer. A plug(104) connects the wiring layer and a conductive pattern(105) and passes through the insulation layer. The conductive pattern comprises a blowing part(105B) and a pad(105A).
申请公布号 KR20110022240(A) 申请公布日期 2011.03.07
申请号 KR20090079749 申请日期 2009.08.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, HAE JUNG;CHO, YONG TAE;LEE, KANG POK
分类号 H01L23/62;H01L21/82 主分类号 H01L23/62
代理机构 代理人
主权项
地址