| 摘要 |
<p>PURPOSE: An integrated zone low noise amplifier is provided to select a low noise amplifier of a source degeneration structure and common source by using two switches. CONSTITUTION: A first variable inductor(Lg) is connected to an input terminal. A gate of a first transistor(M1) is connected to the first variable inductor. A variable capacitor(Cgs) is parallel connected between the gate and source of the first transistor. A second variable inductor is connected to the source of the first transistor. The source of a second transistor(M2) is connected in parallel with the drain of the first transistor. A first switch(SW1) is connected to the gate of the second transistor. A first capacitor(Cd1) is connected to the drain of the second transistor. The gate of a third transistor(M3) is connected to the first capacitor. The source of a fourth transistor(M4) is connected in parallel with the drain of the first transistor. A second switch(SW2) is connected to the gate of the fourth transistor. A second capacitor(Cd2) is connected between drain and narrow band output terminal of the fourth transistor.</p> |
