METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to prevent the damage of the substrate under the contact hole by exposing the substrate under the contact hole by etching through the triple etching process on a first insulation layer, a second insulation layer, and a gate insulation layer. CONSTITUTION: A plurality of recess gates(36) is formed on a substrate(31). A first insulating layer(37) is formed according to the surface of the structure including the recess gate. An interlayer insulating film(38) filling the gap between the recess gates is formed on the first insulating layer. A contact hole(39) which opens the top of the substrate between the recess gates is formed by selectively etching the interlayer insulation layer.