发明名称 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION
摘要 Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The lid assembly comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, the lid assembly comprises a grounded gas manifold assembly positioned above electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
申请公布号 KR101019293(B1) 申请公布日期 2011.03.07
申请号 KR20077024225 申请日期 2006.11.06
申请人 发明人
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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