NON-VOLATILE MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory cell and a manufacturing method thereof are provided to reduce the additional packaging expense by mounting the memory transistor inside the system and omitting the external memory. CONSTITUTION: A memory transistor including a semiconductor film(204A), a buffer layer(206A), an organic ferroelectric film(208A), and a gate electrode(214) is formed on a substrate(200). A driving transistor including the semiconductor film, a buffer layer, a gate insulating layer(209A), and a gate electrode is formed on the top of the substrate. The buffer layer is interposed between the semiconductor film and the organic ferroelectric film.