发明名称 MANUFACTURING METHOD OF METAL OXIDE NANOSTRUCTURE AND ELCTRIC ELEMENT HAVING THE SAME
摘要 PURPOSE: A method for manufacturing a metal oxide nanostructure is provided to control the density and diameter of a seed layer on which a metal oxide nanostructure is formed by controlling a formation area of an amorphous layer. CONSTITUTION: A method for manufacturing a metal oxide nanostructure comprises the steps of: supplying a precursor containing a first metal, a precursor containing a second metal, and oxygen to a substrate; forming a second metal oxide film of an amorphous phase on the substrate; forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; converting the monocrystal first nuclei into seed layers which are mutually distanced and the second nuclei into amorphous layers; and growing a rod selectively formed on the seed layer.
申请公布号 KR20110020963(A) 申请公布日期 2011.03.04
申请号 KR20090078460 申请日期 2009.08.25
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 CHO, HYUNG KOUN;KIM, DONG CHAN
分类号 B82B3/00;B82B1/00 主分类号 B82B3/00
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