发明名称 |
MANUFACTURING METHOD OF METAL OXIDE NANOSTRUCTURE AND ELCTRIC ELEMENT HAVING THE SAME |
摘要 |
PURPOSE: A method for manufacturing a metal oxide nanostructure is provided to control the density and diameter of a seed layer on which a metal oxide nanostructure is formed by controlling a formation area of an amorphous layer. CONSTITUTION: A method for manufacturing a metal oxide nanostructure comprises the steps of: supplying a precursor containing a first metal, a precursor containing a second metal, and oxygen to a substrate; forming a second metal oxide film of an amorphous phase on the substrate; forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; converting the monocrystal first nuclei into seed layers which are mutually distanced and the second nuclei into amorphous layers; and growing a rod selectively formed on the seed layer.
|
申请公布号 |
KR20110020963(A) |
申请公布日期 |
2011.03.04 |
申请号 |
KR20090078460 |
申请日期 |
2009.08.25 |
申请人 |
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
CHO, HYUNG KOUN;KIM, DONG CHAN |
分类号 |
B82B3/00;B82B1/00 |
主分类号 |
B82B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|