NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A non-volatile memory and a forming method thereof are provided to improve the retention property of a device by alleviating the electrical field applied to the edge of the active area by comprising a barrier capping layer. CONSTITUTION: A semiconductor substrate(100) including an element separation layer(105) is prepared for defining the active area. A tunnel insulating layer(110) is formed on the semiconductor substrate of the active area. A charge trapping layer(120) is formed on the tunnel insulating layer. A blocking insulation film(140) is formed on the charge trapping layer and the element isolation film.