发明名称 |
DUAL CONTACT METALLIZATION INCLUDING ELECTROLESS PLATING IN A SEMICONDUCTOR DEVICE |
摘要 |
Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall contact resistance may be accomplished. In some illustrative embodiments, cobalt may be used as a contact metal without any additional conductive barrier materials.
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申请公布号 |
US2011049713(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100854393 |
申请日期 |
2010.08.11 |
申请人 |
FROHBERG KAI;BOEMMELS JUERGEN;SCHALLER MATTHIAS;MUELLER SVEN |
发明人 |
FROHBERG KAI;BOEMMELS JUERGEN;SCHALLER MATTHIAS;MUELLER SVEN |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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