SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of obtaining high device characteristics by reducing damage to a gate electrode lower part. SOLUTION: The semiconductor device is manufactured through the processes of: forming a GaN buffer layer 102 on a substrate 101; forming an un-AlGaN barrier layer 103 on the GaN buffer layer 102; forming a mask 110 for re-growth on the un-AlGaN barrier layer 103; re-growing an n-InAlN contact layer 109 on the un-AlGaN barrier layer 103; removing the mask 110 for re-growth on the un-AlGaN barrier layer 103; forming a source electrode 107 and a drain electrode 108 on the n-InAlN contact layer 109; and forming a gate electrode 106 in a region on the un-AlGaN barrier layer 103 where the mask 110 for re-growth is removed. COPYRIGHT: (C)2011,JPO&INPIT