| 摘要 |
A sensor for night vision applications is provided, wherein the sensor comprises a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1.25 to 1.4μm wavelength. The selection of this cutoff frequency provides improved dark current performance, thereby requiring less cooling of the sensor. Consequently, energy consumption is reduced, as the sensor does not require active cooling, so that the sensor is particularly beneficial for mobile night vision applications where battery weight is of high importance.
|
