NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory element comprising a first conductive layer, a second conductive layer so arranged as to face the first conductive layer, and a variable resistance layer arranged between the first conductive layer and the second conductive layer and containing a metal oxide.  The variable resistance layer has a first crystal grain which is in contact with both the first conductive layer and the second conductive layer, and a second crystal grain which is adjacent to the first crystal grain and in contact with both the first conductive layer and the second conductive layer.  The grain boundary formed between the first crystal grain and the second crystal grain is in contact with both the first conductive layer and the second conductive layer.  As a result, the nonvolatile memory element is capable of stably storing and erasing even when the element is reduced in size.  A nonvolatile memory device is also disclosed.