| 摘要 |
<p>PURPOSE: A method for fabricating a resistance memory device is provided to fundamentally prevent foreign materials from in the interface between a bottom electrode and a resistance variable layer by oxidizing a part of the bottom electrode to form the resistance variable layer. CONSTITUTION: In a method for fabricating a resistance memory device, a bottom electrode comprised of oxidation reduction materials is formed on a substrate in a selection oxidation process. A material layer capable of being oxidized in the selection oxidation process is formed on the bottom electrode. The material layer is comprised of a metal layer or a metal nitride layer. A variable resistance material is formed by selectively oxidizing the material layer through the selection oxidation process A top electrode is formed in the variable resistance material.</p> |
