| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method useful for forming a fine pattern. <P>SOLUTION: The pattern forming method has: the step (1) of applying a first chemically amplified positive resist composition on a support to form a first resist film, subject it to exposure, perform PEB, and perform alkali development to form a first resist pattern; the step (2) of applying a second film forming material on the support, on which the first resist pattern is formed, to form a second film, subject a region containing the position where the first resist pattern is formed to exposure, perform PEB, and perform alkali development. As the second film forming material, a material which contains organic solvent that does not dissolve the first resist layer, and of which solubility does not increase in relation to an alkali developing agent with an amount of energy equal to or smaller than that of the first chemically amplified positive resist composition is used. In the step (2), the exposure amount and PEB temperature are set so that only the first resist pattern in the exposed region is removed by the alkali development. <P>COPYRIGHT: (C)2011,JPO&INPIT |
