FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor solving the problem that carriers in an electron transit layer concentrate on the vicinity of a heterointerface of small mobility to make it difficult to increase electron mobility and also solving the problem that the mobility cannot be made high because of impurity scattering.

SOLUTION: The field-effect transistor includes, on a semiconductor substrate, an electron supply layer composed of a wide-gap semiconductor doped with an n-type impurity to have a wide bandgap, and the electron transit layer composed of a narrow-gap semiconductor layer having a narrower bandgap than the electron supply layer, wherein the electron transit layer comprises three layers of a first non-doped layer containing no impurity, a doped layer containing an impurity, and a second non-doped layer containing no carrier, and a dopant concentration of the doped layer, containing the impurity, in the electron transit layer is ≥1×1016and <1×1017cm-3.

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