| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture and provide a highly reliable display device with a thin film transistor having a high aperture ratio and stable electrical characteristicss. <P>SOLUTION: The semiconductor device has a drive circuit and a display unit (also called as a pixel unit) provided on the same substrate. The drive circuit has a thin film transistor for drive circuit in which a source electrode and a drain electrode are formed of metal and a channel layer is formed of an oxide semiconductor, and a wiring for drive circuit which is formed of metal. The display unit has a thin film transistor for pixel in which a source electrode layer and a drain electrode layer are formed of an oxide semiconductor and a semiconductor layer is formed of an oxide semiconductor, and a wiring for display which is formed of an oxide semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
