| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electronic device and a fabrication method thereof which achieve a high capacitance density and/or a high quality factor (Q). <P>SOLUTION: The electronic device contains a glass substrate 100, a patterned semiconductor substrate having at least one opening and disposed on the glass substrate, and at least one passive component having first conductive layers 104, 104a, and 104b and second conductive layer 112, 112a, 112b, and 112c, wherein the first conductive layers are disposed between the patterned semiconductor substrate and the glass substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
