发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for attaining a low power consumption while securing a stable reset of a selection memory cell. SOLUTION: The nonvolatile semiconductor memory device includes: a plurality of first wiring and second wiring intersecting each other; a memory cell array including the plurality of memory cells connected to each intersection part of the plurality of first wiring and second wiring; and a first wiring control circuit and second wiring control circuit for respectively selecting the first wiring and second wiring to supply voltage and current required for a reset operation or set operation of the memory cells. The first wiring control circuit supplies an unselected voltage according to a distance between the unselected first wiring and the second wiring control circuit to the unselected first wiring. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011044193(A) |
申请公布日期 |
2011.03.03 |
申请号 |
JP20090190472 |
申请日期 |
2009.08.19 |
申请人 |
TOSHIBA CORP |
发明人 |
TERADA YURI;MAEJIMA HIROSHI |
分类号 |
G11C13/00;H01L27/10;H01L27/105 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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