发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THIN-FILM PROBE SHEET
摘要 PROBLEM TO BE SOLVED: To solve such problems that, in a thin-film probe card, a single copper sacrifice layer process is conducted to increase needle height, however, a hole in a needle formation part becomes too deep and plating is not normally precipitated in this process though a multi-step copper sacrifice layer process is necessary to further increase the needle height, and, in a two-step copper sacrifice layer process, a pleat-like polyimide piece is formed in a part corresponding to the stepped part around the sacrifice layer of a probe sheet and it drops during usage (during probe testing) when the outer edge of a second-step sacrifice layer is made larger than that of a first-step sacrifice layer. SOLUTION: Wafer probe test is conducted by using a thin-film probe card wherein the outer edge of a second-step sacrifice layer is made smaller than that of a first-step sacrifice layer. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011043451(A) 申请公布日期 2011.03.03
申请号 JP20090192826 申请日期 2009.08.24
申请人 RENESAS ELECTRONICS CORP 发明人 KAWAKAMI KENJI;AMARI HIROYUKI;MASUDA KENICHI
分类号 G01R1/073;H01L21/66 主分类号 G01R1/073
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