| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which prevents a phenomenon that a neighboring negative wordline effect is serious and prevents useless increase of current consumption, when a negative wordline system is applied and, to provide a driving method thereof. SOLUTION: In the semiconductor memory device, at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines are driven with different wordline driving voltage levels during a period of time that the activated wordline is driven at a high voltage level by applying and selecting an active command. COPYRIGHT: (C)2011,JPO&INPIT |
