| 摘要 |
A semiconductor device includes a substrate, a low dielectric constant layer formed on the substrate, a first protection insulating layer formed on the low dielectric constant layer, and a trench with an interconnect embedded in formed in the first protection insulating layer and the low dielectric constant layer. The sidewall of the trench has a structure that the surface of the first protection insulating layer protrudes from the surface of the low dielectric constant layer, a second protection insulating layer formed by a chemical vapor deposition technique is embedded at the surface of the low dielectric constant layer in an area below the first protection insulating layer, and the sidewall of the trench is constituted by the second protection insulating layer and the first protection insulating layer.
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