LIGHT-EMITTING DIODE HAVING AN INTERLAYER WITH A HIGH VOLTAGE DENSITY, AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a light-emitting diode having an interlayer with a high voltage density, and a method for manufacturing same. The light-emitting diode comprises: a substrate; a buffer layer formed on the substrate; a gallium nitride-based N-type contact layer disposed on the buffer layer; a gallium nitride-based P-type contact layer disposed on the N-type contact layer; an active layer interposed between the N-type contact layer and the P-type contact layer; a gallium nitride-based first lower semiconductor layer interposed between the buffer layer and the N-type contact layer; and a gallium nitride-based first interlayer interposed between the first lower semiconductor layer and the N-type contact layer, wherein the first interlayer has a voltage density less than the buffer layer and greater than the first lower semiconductor layer. Voltage formed in the first lower semiconductor layer can be prevented from being transferred to the N-type contact layer by means of the first interlayer having a relatively high voltage density.