发明名称 |
TRANSISTORS WITH A GATE INSULATION LAYER HAVING A CHANNEL DEPLETING INTERFACIAL CHARGE AND RELATED FABRICATION METHODS |
摘要 |
<p>A metal-insulator-semiconductor field-effect transistor (MISFET) includes a SiC layer with source and drain regions of a first conductivity type spaced apart therein. A first gate insulation layer is on the SiC layer and has a net charge along an interface with the SiC layer that is the same polarity as majority carriers of the source region. A gate contact is on the first gate insulation layer over a channel region of the SiC layer between the source and drain regions. The net charge along the interface between the first gate insulation layer and the SiC layer may deplete majority carriers from an adjacent portion of the channel region between the source and drain regions in the SiC layer, which may increase the threshold voltage of the MISFET and/or increase the electron mobility therein.</p> |
申请公布号 |
WO2011025577(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
WO2010US39439 |
申请日期 |
2010.06.22 |
申请人 |
CREE, INC.;DHAR, SARIT;RYU, SEI-HYUNG |
发明人 |
DHAR, SARIT;RYU, SEI-HYUNG |
分类号 |
H01L21/04;H01L29/24;H01L29/51;H01L29/78 |
主分类号 |
H01L21/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|