RECESSED GATE TYPE SILICON CARBIDE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a SiC MISFET wherein source and drain regions (3, 4) are formed in a SiC semiconductor region (2) of one conductivity type, and a recessed section (5), which is composed of two side surfaces in contact with the source and drain regions, and the bottom surface connecting both the side surfaces, and which has a predetermined depth, is formed in the SiC semiconductor region portion sandwiched between the source and drain regions. Parts (3a, 4a) of the source and drain regions are made thinner than other parts of the source and drain regions, said parts (3a, 4a) being adjacent to the vicinity of both the ends of the bottom surface of the recessed section.