| 摘要 |
The invention relates to a semiconductor laser with at least one semiconductor substrate (10), at least one active layer (20), which is arranged on the semiconductor substrate (10) and generates radiation in one wavelength region, at least one laser mirror (40), which is fitted to one end of the active layer (20) perpendicular thereto and through which some of the radiation generated in the active layer (20) emerges and which is provided with a layer of absorbing material (50,60), which is suitable for reducing the gradient of the luminous efficacy/current characteristic for radiation which emerges through the laser mirror (40). |
