COPPER MATERIAL FOR USE IN A SPUTTERING TARGET, AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a copper material for use in a sputtering target, said copper material comprising high-purity copper having a purity of at least 99.99%, and a manufacturing method therefor. X-ray diffraction peak intensities (I{111}, I{200}, I{220}, and I{311}) for surfaces on which sputtering is performed (surface {111}, surface {200}, surface {220}, and surface {311}) satisfy equation (1), and the diameters of crystal grains in the provided copper material are between 100 µm and 200 µm. (1) I{200}/(I{111}+I{200}+I{220}+I{311}) = 0.4