发明名称 APPARATUS COMPRISING MULTIPLE INTEGRATED CIRCUITS USING DIFFERENT GATE OXIDE THICKNESS ON A SINGLE INTEGRATED CIRCUIT DIE
摘要 An apparatus comprising plurality of functional integrated circuit blocks, each manufactured with different oxide thicknesses on a monolithic integrated circuit die, is described. Using different gate oxide thicknesses for different functional integrated circuit blocks provides reduced power consumption and increases performance in processing systems. Several embodiments comprising different combinations of functional integrated circuit blocks, including processor cores and memory elements, are presented.
申请公布号 KR20110020844(A) 申请公布日期 2011.03.03
申请号 KR20107028634 申请日期 2009.05.08
申请人 QUALCOMM INCORPORATED 发明人 TESSITORE RONALD JOHN
分类号 G06F1/32;G06F12/08 主分类号 G06F1/32
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