METHOD OF MANUFACTURING TRANSISTOR HAVING SHALLOW JUNCTION

摘要

PURPOSE: A method of manufacturing transistor having a shallow junction is provided to improve mobility by forming a shallow junction in the source and drain region of a silicon -4 group element solid solution. CONSTITUTION: In a method of manufacturing transistor having a shallow junction, a source-drain domain is formed on a silicon substrate. The first silicon -4 group element solid solution is formed in the source-drain domain. A dopant layer is formed in the first silicon -4 group element solid solution by implanting dopant An oxide film(70) is formed on the surface of the first silicon -4 group element solid solution region by using an oxidation process. The high concentration silicon -4 group element solid solution layer(80) is formed in the lower part of the oxide film. The shallow junction layer(90) is formed by concentration of dopants which is come out the lower part of a second high concentration silicon-4 group element.