METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of manufacturing a semiconductor element at low cost which incorporates a vertical element structure such as a power element manufactured by a partial SOI (silicon on insulator) substrate or having a wider range of types with the use of a general epitaxial wafer.

SOLUTION: The method for manufacturing the semiconductor device has the steps of: forming an n-type epitaxial layer and a semiconductor epitaxial layer on a p-type silicon single-crystal substrate; forming the semiconductor element and a trench in the semiconductor epitaxial layer; laminating holding substrates on the surface at the side to which the semiconductor element is formed; removing the p-type silicon single-crystal substrate by applying positive voltage to the n-type epitaxial layer to electrochemically etch with the n-type epitaxial layer as an etching-stop layer; forming an insulating layer on the exposed surface; conducting a via-forming for removing an insulating film at the position corresponding to the region to which a vertical-type element semiconductor element is formed out of the insulating film; and forming a rear surface electrode at the via-forming part.

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