| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an improved aperture ratio. <P>SOLUTION: The semiconductor device includes a pixel and a drive circuit formed on the same substrate. A first thin film transistor of the drive circuit and a second thin film transistor of the pixel each have a gate electrode layer; a gate insulating layer on the gate electrode layer; an oxide semiconductor layer on the gate insulating layer; a source electrode layer and a drain electrode layer on the oxide semiconductor layer; and an oxide insulating layer contacting part of the oxide semiconductor layer on the gate insulating layer, the oxide semiconductor layer, the source electrode layer and the drain electrode layer. The gate electrode layer and the gate insulating layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer and the oxide insulating layer of the second thin film transistor each have transparency. The source electrode layer and the drain electrode layer of the first thin film transistor are made of materials different from those of the source electrode layer and the drain electrode layer of the second thin film transistor, and have resistance lower than those of the source electrode layer and the drain electrode layer of the second thin film transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
