| 摘要 |
PROBLEM TO BE SOLVED: To provide a word line driving device where a power voltage is lowered and a voltage sufficient to select a memory cell is supplied to a word line. SOLUTION: The source voltage potential of the pull-up transistor is pulled up after a predetermined period from the rising time of a word line selection instruction signal, by providing a capacitor for coupling the source voltage potential and the gate voltage potential of a pull-up transistor. Using a depression type N-channel field effect transistor as a gate voltage potential control transistor which controls the gate voltage potential of the pull-up transistor, the gate voltage potential is kept at a low level. COPYRIGHT: (C)2011,JPO&INPIT |
