| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a silicon substrate by which an etching rate is strictly controlled while processing treatments are performed. SOLUTION: An etching rate measuring mask layer 38 for measuring the etching rate is formed on the rear surface of the silicon substrate 1 and in crystal anisotropic etching treatment, an etched space 17 is formed in an opening portion 32 provided in the etching rate measuring mask layer. The state of an etching liquid is grasped from the etched space and treatment conditions in crystal anisotropic etching in the following lot is adjusted. COPYRIGHT: (C)2011,JPO&INPIT
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