发明名称 SEMICONDUCTOR ASSEMBLY THAT INCLUDES A POWER SEMICONDUCTOR DIE LOCATED ON A CELL DEFINED BY FIRST AND SECOND PATTERNED POLYMER LAYERS
摘要 A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material.
申请公布号 US2011049700(A1) 申请公布日期 2011.03.03
申请号 US20100939561 申请日期 2010.11.04
申请人 VISHAY GENERAL SEMICONDUCTOR LLC 发明人 CHIANG WAN-LAN;LIN KUANG HANN;PENG CHIH-PING
分类号 H01L23/34;H01L21/44 主分类号 H01L23/34
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