发明名称 COLOR SYSTEM FOR ETCHING GAS
摘要 A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.
申请公布号 US2011049111(A1) 申请公布日期 2011.03.03
申请号 US20100854409 申请日期 2010.08.11
申请人 KO SUNGYONG;KIM MINSHIK;LEE BYOUNGIL;MOON HEESEOK;LEE KWANGMIN;KIM KEEHYUN;LEE WEONMOOK 发明人 KO SUNGYONG;KIM MINSHIK;LEE BYOUNGIL;MOON HEESEOK;LEE KWANGMIN;KIM KEEHYUN;LEE WEONMOOK
分类号 B23K10/00 主分类号 B23K10/00
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