发明名称 |
COLOR SYSTEM FOR ETCHING GAS |
摘要 |
A control system for etching gas is provided. The control system includes a mass flow control unit, a flow rate control unit, and a tuning gas control unit. The mass flow control unit controls a mass flow of an etching gas input to a chamber. The flow rate control unit distributes the etching gas to an upper gas injector and a side gas injector connected with the mass flow control unit and installed in the chamber. The tuning gas control unit distributes and supplies a supplementary gas and tuning gas controlling an ion density and distribution of plasma within the chamber, to the mass flow control unit and the flow rate control unit.
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申请公布号 |
US2011049111(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100854409 |
申请日期 |
2010.08.11 |
申请人 |
KO SUNGYONG;KIM MINSHIK;LEE BYOUNGIL;MOON HEESEOK;LEE KWANGMIN;KIM KEEHYUN;LEE WEONMOOK |
发明人 |
KO SUNGYONG;KIM MINSHIK;LEE BYOUNGIL;MOON HEESEOK;LEE KWANGMIN;KIM KEEHYUN;LEE WEONMOOK |
分类号 |
B23K10/00 |
主分类号 |
B23K10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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