| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory capable of suppressing an increase in current consumption (power consumption). <P>SOLUTION: In the memory (cross point type diode ROM), an impurity region 22 formed on a surface of a semiconductor substrate includes a cell region 22b functioning as a cathode of a diode in a memory cell and a wiring connection region 22a formed with a contact region 24, and a resistance in the vicinity (resistance region 22c) of the wiring connection region 22a in the impurity region 22 is higher than the resistance in the cell region 22b. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
