发明名称 PRESSURE CONTROL APPARATUS, PRESSURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a pressure control apparatus for executing pressure control capable of continuously responding to a great variation of a processing gas flow rate or a processing gas pressure in a chamber in a short time; a pressure control method; and a substrate processing apparatus for continuously executing a plurality of processing steps (processes) and including the pressure control apparatus. SOLUTION: The substrate processing apparatus for executing a plurality of processing steps in a depressurized processing chamber to which a processing gas is supplied includes: a processing gas supply mechanism for supplying the processing gas to the processing chamber; an exhausting mechanism for exhausting a gas from the inside of the processing chamber; an exhausting valve for controlling the exhaust amount of the exhausting mechanism; and an operation control mechanism having a plurality of operation tables for calculating an optimum processing gas pressure for each of the plurality of processing steps and controlling the opening of the exhaust valve on the basis of the operation tables. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011044446(A) 申请公布日期 2011.03.03
申请号 JP20090189710 申请日期 2009.08.19
申请人 TOKYO ELECTRON LTD;TOHOKU UNIV 发明人 TANAKA KOJI;INOKUCHI ATSUTOMO;SHIRAI YASUYUKI;OMI TADAHIRO
分类号 H01L21/205;C23C16/52;H01L21/3065 主分类号 H01L21/205
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