SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent Schottky characteristics by preventing surface deterioration of a surface of a nitride semiconductor due to natural oxidation and a heat treatment. SOLUTION: The semiconductor device is manufactured by forming: a GaN buffer layer 102 formed on a substrate 101 without positively implanting an impurity; an AlxGayIn1-x-yN barrier layer 103 having a larger band gap than the GaN buffer layer 102 has and made of a second nitride semiconductor; a source electrode 105 and a drain electrode 107 formed on and in ohmic contact with an upper surface of the AlxGayIn1-x-yN barrier layer 103; and a gate electrode 106 provided between the source electrode 105 and drain electrode 107. Then, the gate electrode 106 composed of a high-concentration n-type GaaIn1-aN gate electrode 106a which has a smaller band gap than the second nitride semiconductor has and in which an n-type impurity is positively implanted, and an electrode 106b for gate voltage transmission. COPYRIGHT: (C)2011,JPO&INPIT