SIC SINGLE CRYSTAL WAFER AND PROCESS FOR PRODUCTION THEREOF

摘要

Disclosed is an SiC single crystal wafer on which a good-quality epitaxial film having reduced defects originated from a wafer can be grown. The SiC single crystal wafer has a surface-modified layer having a thickness of 50 nm or less and an SiC single crystal part having an oxygen content of 1.0 × 1017 atoms/cm3 or less. The SiC single crystal wafer is produced from high-purity SiC bulk single crystals which are produced by a solution growth method using a raw material having an oxygen content of 100 ppm or less and employing a non-oxidative atmosphere having an oxygen concentration of 100 ppm or less.