| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective mask for EUV exposure, which has a light shielding band superior in cleaning resistance, by improving light shielding performance at an overlapping portion of fields of a transfer pattern in EUV exposure to suppress leakage of exposure light, resulting in reduced effect of shadowing of exposure light, and to provide a method of manufacturing the same. <P>SOLUTION: The formation region of a transfer pattern on an object is defined. In order to prevent EUV light from radiated to other than the formation region of transfer pattern, a light shielding band 18 having a predetermined width is provided around a transfer pattern 21. The light shielding band 18 consists of a layer in which a multilayer reflecting film 12 is irradiated with laser beam to destruct the multilayer reflecting film. The light shielding band is on the same plane as the multilayer reflecting film 12 on a substrate 11. The reflectivity of the EUV light on the light shielding band 18 is lower than that on the multilayer reflecting film 12. <P>COPYRIGHT: (C)2011,JPO&INPIT |
