RADIATION-EMITTING SEMICONDUCTOR CHIP, METHOD OF MANUFACTURING THE SAME, AND METHOD OF ADJUSTING/SETTING BRIGHTNESS OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor chip structure allowing radiation emission to be adjusted and set in a target region during a manufacturing period.

SOLUTION: The brightness of this radiation-emitting semiconductor chip is adjusted and set by putting one or more absorptive and/or partially-insulating brightness-adjusting/setting layers (12, 6, 9) on a radiation output-combining surface (10) of a wafer during a manufacturing period of the semiconductor chip after measurement of radiation-emission characteristics of a radiation-emitting semiconductor layer column (3) of the wafer.

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