| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a through electrode, can be stacked in a longitudinal direction and can increase the degree of freedom of design, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a semiconductor substrate 1, an electrode 30a and an electrode 30b provided apart from each other from a first principal surface 10 along a depth of the semiconductor substrate 1, and a wiring portion 40a connecting the electrodes 30a and electrode 30b to each other and provided from the first principal surface 10 along the depth of the semiconductor substrate 1 without penetrating the semiconductor substrate 1. The electrode 30a is the through hole penetrating the semiconductor substrate 1 to reach a second principal surface 20. The semiconductor device which has the through hole and is stacked in the longitudinal direction has the wiring portion 40a, so as to increase the degree of freedom of design. COPYRIGHT: (C)2011,JPO&INPIT |
