| 摘要 |
PROBLEM TO BE SOLVED: To prevent the degradation of connection reliability in an external connection terminal connected with a wiring and an electrode pad. SOLUTION: A semiconductor device includes an electrode pad 120 and an external connection terminal 200. The external connection terminal 200 contains Sn of≥50 wt.%, Sn and Pb combined of≥90 wt.%, or Pb of≥85 wt.%; and its surface is covered with an Au layer 220. The thickness of the Au layer 220 is preferably≥10 nm and≤1μm. The weight of the Au layer 220 is preferably≤0.6% of that of the external connection terminal 200. COPYRIGHT: (C)2011,JPO&INPIT |
