发明名称 |
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE |
摘要 |
Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
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申请公布号 |
US2011049571(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100855744 |
申请日期 |
2010.08.13 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
MIYOSHI MAKOTO;KURAOKA YOSHITAKA;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;SUGIYAMA TOMOHIKO;TANAKA MITSUHIRO |
分类号 |
H01L29/78;H01L21/20;H01L29/205 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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