发明名称 |
FinFET Formation with a Thermal Oxide Spacer Hard Mask Formed from Crystalline Silicon Layer |
摘要 |
A semiconductor process and apparatus provide a FinFET device by forming a second single crystal semiconductor layer (19) that is isolated from an underlying first single crystal semiconductor layer (17) by a buried insulator layer (18); patterning and etching the second single crystal semiconductor layer (19) to form a single crystal mandrel (42) having vertical sidewalls; thermally oxidizing the vertical sidewalls of the single crystal mandrel to grow oxide spacers (52) having a substantially uniform thickness; selectively removing any remaining portion of the single crystal mandrel (42) while substantially retaining the oxide spacers (52); and selectively etching the first single crystal semiconductor layer (17) using the oxide spacers (52) to form one or more FinFET channel regions (92).
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申请公布号 |
US2011053361(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20090552774 |
申请日期 |
2009.09.02 |
申请人 |
MURALIDHAR RAMACHANDRAN;KHATER MARWAN H |
发明人 |
MURALIDHAR RAMACHANDRAN;KHATER MARWAN H. |
分类号 |
H01L21/3065;H01L21/28 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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