| 摘要 |
The present invention relates to a semiconductor thin film made of a copper-indium-gallium-telluruim (CIGT)-based chalcopyrite precursor compound as expressed in the following chemical formula 1, and to a method for fabricating a CIGT thin film by chemical vapor deposition or atomic layer deposition while simultaneously or sequentially supplying a copper (Cu) precursor, an indium (In) precursor, a gallium (Ga) precursor and a tellurium (Te) precursor on a substrate in a vacuum chamber. xGa1-xTe2 (where 0 < x < 1 in the above chemical formula 1.) The present invention provides a CIGT thin film which is a novel compound semiconductor thin film capable of solving the problem having selenium in a copper-indium-gallium-selenium (CIGS) compound semiconductor thin film. The present invention provides a method for easily fabricating a large area thin film with superior quality, enabling the inexpensive fabrication thereof as well as the mass production thereof. |
