| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is suitable to form a fine hole pattern. <P>SOLUTION: A mask pattern includes a plurality of opening patterns which are transparent regions having centers arranged on each of a plurality of parallel lines, which have first intervals in a first direction and extend in a second direction perpendicular to the first direction, at second intervals in the second direction, and the plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines have centers displaced from each other by 1/n (n is an integer of ≥3) of the second interval in the second direction, and an illumination shape of an illumination light source is set so that three of diffracted light components from a photomask pass through a pupil of a projection optical system. <P>COPYRIGHT: (C)2011,JPO&INPIT |
