| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device that is reduced in threshold current value and increased in light emission efficiency. SOLUTION: The optical semiconductor device includes an InP substrate having a (001) plane as a principal plane, a stripe mesa structure having a lower InP clad layer of a first conductivity type formed on the principal plane of the InP substrate, an active layer formed on the lower InP clad layer and having a width narrower than the width of the InP clad layer, and containing AlGaInAs, and an upper clad layer of a second conductivity type formed on the active layer and having a width equal to that of the lower InP clad layer, and a side barrier layer formed on the side surface of the active layer of the stripe mesa structure, wherein the stripe mesa structure is extended in a [110] direction, and the side barrier layer is formed of AlGaInAs whose Al composition is equal to or larger than 0.32 or InAlAs whose Al composition is 0.45 to 0.51. COPYRIGHT: (C)2011,JPO&INPIT
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