| 摘要 |
Disclosed is a novel method for producing a graphene film suitable for industrial use such as application to electronics, whereby a graphene film having a large area, high homogeneity and small domain boundary or a graphene film having well-aligned crystal orientations can be produced at a low cost. Also disclosed is a graphene film. The aforesaid method for producing a graphene film comprises using a substrate provided with an epitaxial metal film that is formed on the surface of a single-crystal substrate, and contacting a carbon material with the surface of the epitaxial metal film to thereby allow the growth of a graphene film. In the aforesaid graphene film which consists of a number of graphene domains, the area of each domain is 0.000001 µm2 to 100000 mm2 and the orientations of 6-membered cycles in the domains are averagely aligned in a single direction all over the graphene film. |
