发明名称 |
NONVOLATILE MEMORY DEVICE, METHOD OF PROGRAMMING THE SAME AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
PURPOSE: A nonvolatile memory device, a method of programming the same and a memory system including the same are provided to improve reliability by reducing a coupling effect which is generated in programming. CONSTITUTION: In a nonvolatile memory device, a method of programming the same and a memory system including the same, program data is programmed in selected memory cells. Erased memory cells are programmed to a second erase state. The program of program data is performed through an ISPP(Incremental Step Pulse Program) The Erased memory cells is performed through the ISPP(Incremental Step Pulse Program).
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申请公布号 |
KR20110020531(A) |
申请公布日期 |
2011.03.03 |
申请号 |
KR20090078194 |
申请日期 |
2009.08.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, DONG KU;KIM, HYEONG JUN |
分类号 |
G11C16/10;G11C16/02;G11C16/34 |
主分类号 |
G11C16/10 |
代理机构 |
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主权项 |
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地址 |
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