发明名称 NONVOLATILE MEMORY DEVICE, METHOD OF PROGRAMMING THE SAME AND MEMORY SYSTEM INCLUDING THE SAME
摘要 PURPOSE: A nonvolatile memory device, a method of programming the same and a memory system including the same are provided to improve reliability by reducing a coupling effect which is generated in programming. CONSTITUTION: In a nonvolatile memory device, a method of programming the same and a memory system including the same, program data is programmed in selected memory cells. Erased memory cells are programmed to a second erase state. The program of program data is performed through an ISPP(Incremental Step Pulse Program) The Erased memory cells is performed through the ISPP(Incremental Step Pulse Program).
申请公布号 KR20110020531(A) 申请公布日期 2011.03.03
申请号 KR20090078194 申请日期 2009.08.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, DONG KU;KIM, HYEONG JUN
分类号 G11C16/10;G11C16/02;G11C16/34 主分类号 G11C16/10
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