| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer of high quality having an excellent flatness and film thickness uniformity. SOLUTION: This method of manufacturing the epitaxial silicon wafer is constituted to form an epitaxial film 20 (Fig.1(b)), on a surface of a mirror-finished silicon wafer 10 (Fig.1(a)), thereafter to perform grinding-treatment, polishing-treatment or chemical-etching-treatment for only a back face of the silicon wafer, and to remove a silicon deposit 21 deposited onto a back face end part of the silicon wafer 10 when forming the epitaxial film 20 (Fig.1(c)). COPYRIGHT: (C)2011,JPO&INPIT |
